High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Seppo Orsila; Mika Toivonen; Pekka Savolainen; Ville Vilokkinen; Petri Melanen; Markus Pessa; Mika J. Saarinen; Petteri Uusimaa; Pat Corvini; Fang Fang; Mitch Jansen; Rashit F. Nabiev

doi:10.1117/12.344531

1 April 1999 High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Seppo Orsila, Mika Toivonen, Pekka Savolainen, Ville Vilokkinen, Petri Melanen, Markus Pessa, Mika J. Saarinen, Petteri Uusimaa, Pat Corvini, Fang Fang, Mitch Jansen, Rashit F. Nabiev

Author Affiliations +

Proceedings Volume 3628, In-Plane Semiconductor Lasers III; (1999) https://doi.org/10.1117/12.344531
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

This paper presents the performance characteristics and reliability data of AlGaInP-based VISIBLE laser diodes emitting at the wavelengths from 630 to 670 nm. The lasers are grown by toxic gas free solid source molecular beam epitaxy.

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Seppo Orsila, Mika Toivonen, Pekka Savolainen, Ville Vilokkinen, Petri Melanen, Markus Pessa, Mika J. Saarinen, Petteri Uusimaa, Pat Corvini, Fang Fang, Mitch Jansen, and Rashit F. Nabiev "High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344531

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