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1 April 1999 High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy
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Abstract
This paper presents the performance characteristics and reliability data of AlGaInP-based VISIBLE laser diodes emitting at the wavelengths from 630 to 670 nm. The lasers are grown by toxic gas free solid source molecular beam epitaxy.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seppo Orsila, Mika Toivonen, Pekka Savolainen, Ville Vilokkinen, Petri Melanen, Markus Pessa, Mika J. Saarinen, Petteri Uusimaa, Pat Corvini, Fang Fang, Mitch Jansen, and Rashit F. Nabiev "High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344531
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