1 April 1999 Integration of red, infrared, and blue light sources by wafer fusion
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In this work, we demonstrate fusion of GaAs-based laser structures to GaN-based light-emitting diode (LED) heterostructures. Successful operation of red and infrared lasers fused to functioning GaN LEDs is achieved. A single heterostructure consisting of AlGaInAs/AlGaAs quantum well (QW) and GaInP/AlGaInP QW laser diode structures was grown by low-pressure organometallic vapor phase epitaxy (OMVPE) on GaAs substrates. The GaN LED structure was grown by OMVPE on an A-face sapphire substrate. The heterostructures were fused at 650 degrees Celsius in an H2 ambient, while under uniaxial pressure. To fabricate the lasers, the GaAs substrate was selectively etched, leaving the red and infrared QW laser stack structure on GaN. Ridge waveguide QW lasers and GaN LEDs were fabricated with the fused epilayers. Infrared, AlGaInAs QW lasers (4 X 500 micrometer), operated with a threshold current (Ith) of 40 mA and external differential quantum efficiency ((eta) d) of 11.5%/facet at about 821 nm. Red, GaInP QW lasers (4 X 500 micrometer), operated with a Ith of 118 mA and (eta) d of 18.7%/facet at about 660 nm. The adjacent InGaN/GaN LED emitted at 446 nm.
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Philip D. Floyd, Philip D. Floyd, Christopher L. Chua, Christopher L. Chua, David W. Treat, David W. Treat, David P. Bour, David P. Bour, } "Integration of red, infrared, and blue light sources by wafer fusion", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); doi: 10.1117/12.344532; https://doi.org/10.1117/12.344532

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