Paper
1 April 1999 Multiple-wavelength lasers defined by stripe width using one-step impurity-free quantum well intermixing technique
Won Jun Choi, Erik J. Skogen, Jin K. Kim, Ryan L. Naone, Larry A. Coldren
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Abstract
Impurity free intermixing of In0.22Ga0.78As/GaAs quantum wells in a semiconductor laser has been carried out by rapid thermal annealing various width ridges capped with SiNx film. We have observed greater blue-shifting of the lasing wavelength for wider ridge lasers, caused by greater degree of quantum well intermixing. This dependence of quantum well intermixing on the ridge width has been explained by the redistribution of stress fields created by the SiNx capping film on the patterned structure.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won Jun Choi, Erik J. Skogen, Jin K. Kim, Ryan L. Naone, and Larry A. Coldren "Multiple-wavelength lasers defined by stripe width using one-step impurity-free quantum well intermixing technique", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344523
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KEYWORDS
Quantum wells

Annealing

Semiconducting wafers

Semiconductor lasers

Internal quantum efficiency

Photonic integrated circuits

Beryllium

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