7 April 1999 AlxGa1-xN p-i-n photodiodes on sapphire substrates
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Abstract
We report the fabrication and characterization of AlxGa1-xN p-i-n photodiodes (0.05 less than or equal to X less than or equal to 0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m2 to 1 kW/m2) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-AlxGa1-xN region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non- exponential, with a decay time longer than the RC constant.
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Danielle Walker, Danielle Walker, Patrick Kung, Patrick Kung, Peter M. Sandvik, Peter M. Sandvik, Jia-Jiun Wu, Jia-Jiun Wu, Melissa Hamilton, Melissa Hamilton, Il Hwan Lee, Il Hwan Lee, Jacqueline E. Diaz, Jacqueline E. Diaz, Manijeh Razeghi, Manijeh Razeghi, } "AlxGa1-xN p-i-n photodiodes on sapphire substrates", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344556; https://doi.org/10.1117/12.344556
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