Paper
7 April 1999 AlxGa1-xN p-i-n photodiodes on sapphire substrates
Danielle Walker, Patrick Kung, Peter M. Sandvik, Jia-Jiun Wu, Melissa Hamilton, Il Hwan Lee, Jacqueline E. Diaz, Manijeh Razeghi
Author Affiliations +
Abstract
We report the fabrication and characterization of AlxGa1-xN p-i-n photodiodes (0.05 less than or equal to X less than or equal to 0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m2 to 1 kW/m2) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-AlxGa1-xN region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non- exponential, with a decay time longer than the RC constant.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Danielle Walker, Patrick Kung, Peter M. Sandvik, Jia-Jiun Wu, Melissa Hamilton, Il Hwan Lee, Jacqueline E. Diaz, and Manijeh Razeghi "AlxGa1-xN p-i-n photodiodes on sapphire substrates", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344556
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Cited by 3 scholarly publications.
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KEYWORDS
Aluminum

Photodetectors

Capacitance

Sensors

PIN photodiodes

Sapphire

Ultraviolet radiation

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