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7 April 1999 Computer simulation of HgCdTe photovoltaic devices based on complex heterostructures
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Abstract
We analyze numerically properties of small-size infrared photovoltaic devices based on complex two-dimensional Hg1- xCdxTe heterostructures. An original iteration scheme was used to solve the system of nonlinear continuity equations and the Poisson equation. All quantities are expressed as functions of electric potential and Fermi quasi-levels. The results of calculations are presented as the maps showing spatial distribution of sensitivity and density of noise generation for 4 types of heterostructures. In addition, resulting parameters of the devices are summarized in the table. This approach may help to understand specific features of the heterostructural devices and optimize their performance. The simulations show viability of constructing devices with active region buried inside a wide gap material where existing potential barriers prevent adverse effects of both recombination of photogenerated carriers and thermal generation at surfaces, interfaces and contacts.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Krzysztof Jozwikowski, Jozef Piotrowski, Krzysztof Adamiec, and Antoni Rogalski "Computer simulation of HgCdTe photovoltaic devices based on complex heterostructures", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344584
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