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7 April 1999 Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-μm wavelength range
Joseph S. Wojkowski; Hooman Mohseni; Jedon D. Kim; Manijeh Razeghi
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Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344573
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States
Abstract
We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400 X 400 micrometer mesas using standard photolithography, etching, and metallization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 micrometer at 300 K. The devices showed a high quantum efficiency of 40% at 7 micrometer at room temperature. A responsivity of 300 mA/W was measured at 7 micrometer under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2 X 108 cmHz1/2/W.
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Joseph S. Wojkowski, Hooman Mohseni, Jedon D. Kim, and Manijeh Razeghi "Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-μm wavelength range", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344573
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