7 April 1999 Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs
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Abstract
We report the effect of annealing temperature on the near bandgap transmittance, absorption coefficient, as well as the evolution of shallow-level defects of arsenic-ion-implanted GaAs (referred as GaAs:As+) by using Fourier transform infrared spectroscopy. By either fitting the absorption curve with A(hv-Eg)1/2 or extrapolating the ((alpha) hv)2 curve to the abscissa, the blue shift of bandgap energy of RTA-annealed GaAs:As+ samples was found to increase from 1.35 eV (Ta equals 300 degrees Celsius) to 1.41 eV (Ta equals 800 degrees Celsius). The slightly perturbed absorption spectra at near bandgap region interpret that there are still a large amount of near-bandedge defects continuously distributed in the RTA-annealed GaAs:As+ samples. The diminishing of shallow-level defects with at higher annealing temperatures was also observed via the derivative absorption spectra.
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Gong-Ru Lin, Ci-Ling Pan, "Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344577; https://doi.org/10.1117/12.344577
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