Electrical characterization of AlxGa1-xN for UV photodetector applications

Adam W. Saxler; Mohamad Ahoujja; W. C. Mitchel; Patrick Kung; Danielle Walker; Manijeh Razeghi

doi:10.1117/12.344558

7 April 1999 Electrical characterization of Al_xGa_1-xN for UV photodetector applications

Adam W. Saxler, Mohamad Ahoujja, W. C. Mitchel, Patrick Kung, Danielle Walker, Manijeh Razeghi

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344558
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Ultraviolet photodetectors have many military and commercial applications. However, for many of these applications, the photodetectors must be solar blind. This means that the photodetectors must have a cutoff wavelength of less than about 270 nm. Semiconductor based devices would then need energy gaps of over 4.6 eV. In the Al_xGa_1-xN system, the aluminum mole fraction, x, required is over 40%. As the energy gap is increased, doping becomes much more difficult, especially p-type doping. This report is a study of the electrical properties of Al_xGa_1-xN to enable better control of the doping. Magnesium doped p-type Al_xGa_{1- x}N has been studied using high-temperature Hall effect measurements. The acceptor ionization energy has been found to increase substantially with the aluminum content. Short-period superlattices consisting of alternating layers of GaN:Mg and AlGaN:Mg were also grown by low-pressure organometallic vapor phase epitaxy. The electrical properties of these superlattices were measured as a function of temperature and compared to conventional AlGaN:Mg layers. It is shown that the optical absorption edge can be shifted to shorter wavelengths while lowering the acceptor ionization energy by using short- period superlattice structures instead of bulk-like AlGaN:Mg. Silicon doped n-type films have also been studied.

Citation Download Citation

Adam W. Saxler, Mohamad Ahoujja, W. C. Mitchel, Patrick Kung, Danielle Walker, and Manijeh Razeghi "Electrical characterization of Al_xGa_1-xN for UV photodetector applications", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344558

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