7 April 1999 HgCdTe photodiode passivated with a wide-bandgap epitaxial layer
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Abstract
The surface passivation is essential for the fabrication of high performance HgCdTe photodiodes, especially for photodiodes with small junction area. The fabrication of the HgCdTe photodiodes passivated with a wide band gap epitaxial layer has been described. The planar double-layer heterojunction (DLHJ) structures used in fabrication Hg1- xCdxTe photodiodes were grown on CdZnTe substrates by liquid phase epitaxy (LPE). The P+-n long wavelength infrared radiation (LWIR) photodiodes were fabricated by arsenic diffusion into n-type HgCdTe DLHJ structures. To improve the photodiode performance a thickness of n-type base layer was limited. The photodiodes performances were determined from measurements of the current-voltage and spectral response characteristics. The generation- recombination current was found to be dominant current around zero bias voltage at 77 K. The diodes without antireflection coating had a typical quantum efficiency of 60 percent. The performance of both type of p-n LWIR HgCdTe photodiodes (with and without the wide band gap epitaxial layer) have been compared.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaroslaw Rutkowski, Jaroslaw Rutkowski, Antoni Rogalski, Antoni Rogalski, Krzysztof Adamiec, Krzysztof Adamiec, } "HgCdTe photodiode passivated with a wide-bandgap epitaxial layer", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344580; https://doi.org/10.1117/12.344580
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