7 April 1999 High-speed high-efficiency resonant-cavity-enhanced photodiodes
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Abstract
In this paper, we review our research efforts on RCE high- speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.
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Ekmel Ozbay, Ibrahim Kimukin, Necmi Biyikli, Orhan Aytur, Mutlu Goekkavas, Goekhan Ulu, M. Selim Unlu, Richard P. Mirin, Kristine A. Bertness, David H. Christensen, Elias Towe, Gary Tuttle, "High-speed high-efficiency resonant-cavity-enhanced photodiodes", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344566; https://doi.org/10.1117/12.344566
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