7 April 1999 High-speed high-efficiency resonant-cavity-enhanced photodiodes
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In this paper, we review our research efforts on RCE high- speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ekmel Ozbay, Ekmel Ozbay, Ibrahim Kimukin, Ibrahim Kimukin, Necmi Biyikli, Necmi Biyikli, Orhan Aytur, Orhan Aytur, Mutlu Goekkavas, Mutlu Goekkavas, Goekhan Ulu, Goekhan Ulu, M. Selim Unlu, M. Selim Unlu, Richard P. Mirin, Richard P. Mirin, Kristine A. Bertness, Kristine A. Bertness, David H. Christensen, David H. Christensen, Elias Towe, Elias Towe, Gary Tuttle, Gary Tuttle, } "High-speed high-efficiency resonant-cavity-enhanced photodiodes", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344566; https://doi.org/10.1117/12.344566


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