Lateral epitaxial overgrowth for defect-free GaN substrates

Jaime A. Freitas Jr.; Gennady V. Saparin; Ok-Hyun Nam; Tsvetanka S. Zheleva; Robert F. Davis

doi:10.1117/12.344587

7 April 1999 Lateral epitaxial overgrowth for defect-free GaN substrates

Jaime A. Freitas Jr., Gennady V. Saparin, Ok-Hyun Nam, Tsvetanka S. Zheleva, Robert F. Davis

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344587
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Epitaxial growth techniques have made possible the fabrication of heteroepitaxial GaN films, which are of great interest for fabricating optical, high power and high frequency devices. A major problem for many device applications, however, is that these materials contain high densities of dislocations, between 10⁸ and 10¹⁰ cm^-2, which limit device performance. Recently, it has been found that reduced dislocation densities can be achieved using a lateral epitaxial overgrowth technique. Our optical and microstructural studios of un-coalesced and coalesced GaN layers indicate that most of the structural defects are confined only to the patterning apertures and that high quality material is present in the lateral epitaxial overgrown regions. PL measurements indicated that Si impurities have been incorporated in the epitaxial layers. Cathodoluminescence imaging shows the spatial distribution of recombination centers across the homoepitaxial layers.

Citation Download Citation

Jaime A. Freitas Jr., Gennady V. Saparin, Ok-Hyun Nam, Tsvetanka S. Zheleva, and Robert F. Davis "Lateral epitaxial overgrowth for defect-free GaN substrates", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344587

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