7 April 1999 Lateral epitaxial overgrowth for defect-free GaN substrates
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Abstract
Epitaxial growth techniques have made possible the fabrication of heteroepitaxial GaN films, which are of great interest for fabricating optical, high power and high frequency devices. A major problem for many device applications, however, is that these materials contain high densities of dislocations, between 108 and 1010 cm-2, which limit device performance. Recently, it has been found that reduced dislocation densities can be achieved using a lateral epitaxial overgrowth technique. Our optical and microstructural studios of un-coalesced and coalesced GaN layers indicate that most of the structural defects are confined only to the patterning apertures and that high quality material is present in the lateral epitaxial overgrown regions. PL measurements indicated that Si impurities have been incorporated in the epitaxial layers. Cathodoluminescence imaging shows the spatial distribution of recombination centers across the homoepitaxial layers.
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Jaime A. Freitas, Gennady V. Saparin, Ok-Hyun Nam, Tsvetanka S. Zheleva, Robert F. Davis, "Lateral epitaxial overgrowth for defect-free GaN substrates", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344587; https://doi.org/10.1117/12.344587
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