7 April 1999 MOVPE growth of HgCdTe for bandgap engineered IR detector arrays
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Recent advances in metalorganic vapor phase epitaxy (MOVPE) of HgCdTe are reviewed that have impacted in situ growth of bandgap engineered IR detector devices. MOVPE can now be readily used to grow multilayer HgCdTe structures with complete flexibility in iodine donor and arsenic acceptor doping and tight control of alloy composition. 100% activation of both donor and acceptor dopants has been achieved and the mobilities and lifetimes of HgCdTe grown on lattice-matched CdZnTe are comparable to the best values achieved in HgCdTe by any epitaxial growth technique. The defects measured by etch pit density counts in multilayer structures with n-type and p- type regions are reported. Single-band IR detector device results are reported that have been grown in situ, for operation in the long wavelength (LW, 8 - 12 micrometer) and medium wavelength (MW, 3 - 5 micrometer) IR spectral bands. Their material characteristics and detector performances are reviewed and compared with theoretical modeling results.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pradip Mitra, Pradip Mitra, Marion B. Reine, Marion B. Reine, } "MOVPE growth of HgCdTe for bandgap engineered IR detector arrays", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344578; https://doi.org/10.1117/12.344578

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