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7 April 1999 Multicolor 4- to 20-um InP-based quantum well infrared photodetectors
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In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 microns, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular beam epitaxy. We demonstrate the first long- wavelength quantum well infrared photodetectors using the lattice-matched n-doped InGaAlAs/InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 micrometer, respectively. A 45 degree facet coupled illumination responsivity of R equals 0.37 A/W and detectivity of D*(lambda ) equals 1 X 109 cm (root)Hz W-1 at T equals 77 K, for a cutoff wavelength (lambda) c equals 13.3 micrometer have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In0.52Ga0.21Al0.27As/InP heterojunctions. We also report quantum well infrared photodetector structures of In0.53Ga0.47As/Al0.48In0.52As grown on InP substrate with photoresponse at 4 micrometer suitable for mid-wavelength infrared detectors. These detectors exhibit a constant peak responsivity of 30 mA/W independent of temperature in the range from T equals 77 K to T equals 200 K. Combining these two materials, we report the first multispectral detectors that combine lattice-matched quantum wells of InGaAs/InAlAs and InGaAs/InP. Utilizing two contacts, a voltage tunable detector with (lambda) p equals 8 micrometer at a bias of V equals 5 V and (lambda) p equals 4 micrometer at V equals 10 V is demonstrated.
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Christopher Louis Jelen, Steven Slivken, Gail J. Brown, and Manijeh Razeghi "Multicolor 4- to 20-um InP-based quantum well infrared photodetectors", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999);

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