Near-infrared photodetectors based on a HgInTe-semiconductor compound

Alexander I. Malik; Manuela Vieira; Miguel Fernandes; Filipe Macarico; Zinaida M. Grushka

doi:10.1117/12.344582

7 April 1999 Near-infrared photodetectors based on a HgInTe-semiconductor compound

Alexander I. Malik, Manuela Vieira, Miguel Fernandes, Filipe Macarico, Zinaida M. Grushka

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344582
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We present a new near-infrared photodetectors fabricated based on Hg₃In₂Te₆ semiconductor compound. This ternary compound is a direct-gap n-type semiconductor with the band gap of 0.74 eV and carrier concentration about 10¹³ cm^-3 at room temperature. Surface-barrier structures a transparent conducting metal oxide electrode-interfacial chemical grown oxide-semiconductor substrate with an active area from 3 to 50 mm² have been fabricated by chemical oxidation of Hg₃In₂Te₆ surface for the potential barrier's formation. The composition of oxide layer (40% In₂O₃, 50% TeO₂, and 10% HgO) was determined using XPS analysis. Tin-doped indium oxide (ITO) film (as transparent conducting electrode) was deposited over this layer by magnetron RF sputtering technique. The devices are very sensitive to light with the wavelength from 0.4 to 1.7 micrometer. A self-calibrated photodetectors, which permit 100% external quantum efficiency (within error not exceeding 2%) at wavelengths of 1.3 and 1.5 micrometer, have been developed. The photodetectors fabricated on thin Hg₃In₂Te₆ substrates have a low producing price and can be fabricated with a large photosensitive area. Photodetectors with an active area of 3 mm² exhibit the rise and fall times from 2 to 4 ns under 1.3 micrometer pulse irradiation. Both basic material aspects and devices fabrication technique is detailed discussed.

Citation Download Citation

Alexander I. Malik, Manuela Vieira, Miguel Fernandes, Filipe Macarico, and Zinaida M. Grushka "Near-infrared photodetectors based on a HgInTe-semiconductor compound", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344582

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available