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7 April 1999 Near-infrared photodetectors based on a HgInTe-semiconductor compound
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We present a new near-infrared photodetectors fabricated based on Hg3In2Te6 semiconductor compound. This ternary compound is a direct-gap n-type semiconductor with the band gap of 0.74 eV and carrier concentration about 1013 cm-3 at room temperature. Surface-barrier structures a transparent conducting metal oxide electrode-interfacial chemical grown oxide-semiconductor substrate with an active area from 3 to 50 mm2 have been fabricated by chemical oxidation of Hg3In2Te6 surface for the potential barrier's formation. The composition of oxide layer (40% In2O3, 50% TeO2, and 10% HgO) was determined using XPS analysis. Tin-doped indium oxide (ITO) film (as transparent conducting electrode) was deposited over this layer by magnetron RF sputtering technique. The devices are very sensitive to light with the wavelength from 0.4 to 1.7 micrometer. A self-calibrated photodetectors, which permit 100% external quantum efficiency (within error not exceeding 2%) at wavelengths of 1.3 and 1.5 micrometer, have been developed. The photodetectors fabricated on thin Hg3In2Te6 substrates have a low producing price and can be fabricated with a large photosensitive area. Photodetectors with an active area of 3 mm2 exhibit the rise and fall times from 2 to 4 ns under 1.3 micrometer pulse irradiation. Both basic material aspects and devices fabrication technique is detailed discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander I. Malik, Manuela Vieira, Miguel Fernandes, Filipe Macarico, and Zinaida M. Grushka "Near-infrared photodetectors based on a HgInTe-semiconductor compound", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999);

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