7 April 1999 UV Schottky-barrier detector development for possible Air Force applications
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This paper discusses the collaborative optical and electrical characterization of the first photovoltaic (PV) III-nitride based detectors grown and fabricated by the Air Force Research Laboratory (AFRL). These 2.6 micrometer thick, n-type GaN Schottky detector structures doped with Si were grown by molecular beam epitaxy (MBE) on (0001)-oriented sapphire substrates, and incorporated palladium (Pd) as the Schottky metal contact. Working Schottky-barrier detector sizes ranged from 50 micrometer to 1600 micrometer in diameter. Flood- illuminated spectral responsivities of these Schottky detectors were as high as 0.12 A/W (for a 1600 micrometer diameter device biased at -1.5 V) at a peak wavelength of 273 nm. The typical measured frequency response of these detectors was flat from dc to the chopper limit of 700 Hz, and the 1/e response time of a 1600 micrometer diameter Schottky- barrier GaN detector was found to be as low as 50 microsecond(s) at zero bias. Noise characterization of these detectors was also performed, and noise equivalent powers (NEPs) of sample GaN Schottky-barrier detectors are reported.
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Gary A. Smith, Gary A. Smith, Michael J. Estes, Michael J. Estes, Joseph E. Van Nostrand, Joseph E. Van Nostrand, Tuoc Dang, Tuoc Dang, P. J. Schreiber, P. J. Schreiber, Henryk Temkin, Henryk Temkin, J. Hoelscher, J. Hoelscher, } "UV Schottky-barrier detector development for possible Air Force applications", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344588; https://doi.org/10.1117/12.344588


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