Paper
7 April 1999 Ultrafast photodetectors with near-unity quantum efficiency
Goekhan Ulu, Mutlu Goekkavas, M. Selim Unlu, Necmi Biyikli, Ekmel Ozbay, Orhan Aytur, Richard P. Mirin, David H. Christensen
Author Affiliations +
Abstract
We designed, fabricated and characterized AlxGa1- xAs/GaAs p-i-n resonant cavity enhanced (RCE) photodetectors with near-unity quantum efficiency. The peak wavelength is in the 780 - 830 nm region and post-process adjustable by recessing the top surface. Transit time limited bandwidth for these devices is in excess of 50 GHz. Possible applications of these detectors include conventional measurements of low light levels, quantum optical experiments that use pulsed sources and short-haul high speed communications.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Goekhan Ulu, Mutlu Goekkavas, M. Selim Unlu, Necmi Biyikli, Ekmel Ozbay, Orhan Aytur, Richard P. Mirin, and David H. Christensen "Ultrafast photodetectors with near-unity quantum efficiency", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344569
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KEYWORDS
Sensors

Quantum efficiency

Photodetectors

Absorption

Reflectivity

Mirrors

Picosecond phenomena

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