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19 March 1999 1850 A/W responsivity in optically controlled MOSFET by illumination of 1.5 μm wavelength light
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Abstract
The gate length dependencies of the optical response characteristics in the optically controlled MOSFET have measured. This device was the integrated structure of absorption region and MOSFET region by using direct wafer bonding technique. By reducing the gate length of MOSFET region, the transconductance of FET channel was increased, and we obtained high current modulation and responsivity by irradiation of 1.5 micrometer wavelength light.
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Yuichi Nitta, Tomonari Yamagata, Yohei Takano, and Kazuhiko Shimomura "1850 A/W responsivity in optically controlled MOSFET by illumination of 1.5 μm wavelength light", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342793
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