19 March 1999 Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer
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Abstract
In this report, we show that a thin interfacial silicon dioxide layer placed between the Schottky metal and the silicon substrate reduces the leakage current of a metal- semiconductor-metal photodetector. We find the optimal interfacial oxide layer to be about 3 or 4 nm thick and is made by dry furnace oxidation of the silicon substrate at 800 degrees Celsius, taken from a 0.18 micrometer CMOS process normally used to make the gate oxide. As compared to a metal- semiconductor-metal detector without this oxide layer, we measure a factor 5 reduction in leakage current density to 18 (mu) A/cm2 at 5 V, a weaker increase in dark current with bias, and a factor 3 improvement in photoresponsivity to 0.35 A/W at 635 nm wavelength. Additionally, we compare Schottky barrier height, effective Richardson constant, and capacitance measurements between photodetectors made with and without this interfacial oxide.
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Myron Seto, Myron Seto, C. Rochefort, C. Rochefort, S. de Jager, S. de Jager, "Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342794; https://doi.org/10.1117/12.342794
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