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19 March 1999 Monolithic integration of III-V materials and devices on silicon
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The realization of monolithic optical interconnects by integration of III-V materials with conventional Si circuitry has long been hindered by materials incompatibilities (i.e. lattice mismatch and heterovalent interface) and practical processing constraints. We have demonstrated successful integration of hetero-epitaxially grown InGaAs/Si diodes with an n-well CMOS process on (001) Si offcut 6 degrees towards [110]. The In0.15Ga0.85As/InxGa1- xAs/GaAs/Si diodes were grown by atmospheric pressure organo-metallic chemical vapor deposition (OMCVD) and features a room temperature R0A product of 20,000 ohm-cm2. No degradation of PMOS or NMOS transistor characteristics was detected upon integration of the III-V devices. Further improvement of III-V/Si device characteristics are anticipated in future efforts by incorporating relaxed, compositionally- graded Ge/GexSi1-x/Si with low threading dislocation densities (approximately 2 X 106/cm2) to bridge the gap in lattice constants between Si and GaAs. Recent progress towards this end includes the suppression of antiphase disorder during GaAs growth on Ge/GexSi1-x/Si by OMCVD and strong room temperature photoluminescence from In0.20Ga0.80As QW test structures on GaAs/GexSi1- x/Si at 920 nm.
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Steve Ting, Mayank T. Bulsara, Vicky Yang, Mike Groenert, Srikanth Samavedam, Matt Currie, Thomas Langdo, Eugene A. Fitzgerald, Abhay M. Joshi, Rene Brown, Xinde Wang, Robert M. Sieg, and Steven A. Ringel "Monolithic integration of III-V materials and devices on silicon", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999);

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