19 March 1999 Near-infrared 16-pixel linear array based on polycrystalline Ge on Si
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Abstract
We report on the fabrication of a detector array for the near infrared on silicon substrate. Thermally evaporated polycrystalline germanium is used as the active layer in the device which consists of 16 pixel with dot-pitch of about 100 micron; the single pixel has a metal-semiconductor-metal structure. We demonstrate a responsivity of 16 mA/W at 1.3 micron and extending down to 1.55 micron. At the same wavelength an operation speed in the nanoseconds range is demonstrated. The overall fabrication process, including substrate cleaning and preparation, requires temperatures lower than 350 degrees Celsius being fully compatible with silicon electronics.
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Gianlorenzo Masini, Lorenzo Colace, Fabrizio M. Galluzzi, Gaetano Assanto, "Near-infrared 16-pixel linear array based on polycrystalline Ge on Si", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342803; https://doi.org/10.1117/12.342803
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