19 March 1999 Silicon-on-insulator resonant cavity photodiode without a slow carrier diffusion tail
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Abstract
We report on a novel silicon-based resonant cavity photodiode with a buried silicon dioxide layer as the bottom reflector. The buried oxide is created by using a separation by implantation of oxygen technique. The device shows large Fabry-Perot oscillations. Resonant peaks and anti-resonant troughs are observed as a function of the wavelength, with a peak responsivity of about 50 mA/W at 650 nm and 709 nm. The leakage current density is 85 pA/mm2 at -5 V, and the average zero-bias capacitance is 12 pF/mm2. We also demonstrate that the buried oxide prevents carriers generated deep within the substrate from reaching the top contacts, thus removing any slow carrier diffusion tail from the impulse response.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vasileios S. Sinnis, Vasileios S. Sinnis, Myron Seto, Myron Seto, Gert W. t'Hooft, Gert W. t'Hooft, Y. Watabe, Y. Watabe, Alan P. Morrison, Alan P. Morrison, Willem Hoekstra, Willem Hoekstra, W. B. De Boer, W. B. De Boer, } "Silicon-on-insulator resonant cavity photodiode without a slow carrier diffusion tail", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342802; https://doi.org/10.1117/12.342802
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