Simulation studies of a <beta>-SiC-on-insulator Pockels phase modulator

Adrian P. Vonsovici; Graham T. Reed; Alan G. R. Evans

doi:10.1117/12.342782

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19 March 1999 Simulation studies of a β-SiC-on-insulator Pockels phase modulator

Adrian P. Vonsovici, Graham T. Reed, Alan G. R. Evans

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Proceedings Volume 3630, Silicon-based Optoelectronics; (1999) https://doi.org/10.1117/12.342782
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We have designed waveguide modulators using (beta) -SiC-on- insulator waveguides and the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure. This allowed us to evaluate the local modulation of the refractive index as a function of applied external bias and to determine the effective index modulation of the guided mode. The optical simulations were performed using the Spectral Index and the Effective Index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Application to Mach- Zehnder intensity modulators is described. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology.

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Adrian P. Vonsovici, Graham T. Reed, and Alan G. R. Evans "Simulation studies of a β-SiC-on-insulator Pockels phase modulator", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342782

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