Laser interferometer using thin film photodetector

Minoru Sasaki; Xiaoyu Mi; Kazuhiro Hane

doi:10.1117/12.348310

30 April 1999 Laser interferometer using thin film photodetector

Minoru Sasaki, Xiaoyu Mi, Kazuhiro Hane

Proceedings Volume 3631, Optoelectronic Integrated Circuits and Packaging III; (1999) https://doi.org/10.1117/12.348310
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Novel thin film photodiode is proposed. The active layer is thinner than the wavelength of the incident light. A part of the incident light beam is detected and the rest passes through the thin film photodiode without the absorption. Being inserted in the optical field, this sensor can detect the intensity profile formed along the propagating direction of the laser beam. This function is applied to construct the new interferometer detecting the intensity profile of the standing wave produced by the incoming and the reflected laser beams.

Citation Download Citation

Minoru Sasaki, Xiaoyu Mi, and Kazuhiro Hane "Laser interferometer using thin film photodetector", Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); https://doi.org/10.1117/12.348310

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