30 April 1999 Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels
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Abstract
The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 micrometers silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850 nm operation. The measurement result under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4 X 4 optoelectronic crossbar structure consisting of hybrid CMOS- SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongda Chen, Hongda Chen, Rong Han Wu, Rong Han Wu, Zhibiao Chen, Zhibiao Chen, Yi H. Zhang, Yi H. Zhang, Yun Du, Yun Du, Qing-Ming Zeng, Qing-Ming Zeng, Xian-Jie Li, Xian-Jie Li, Yimo Zhang, Yimo Zhang, Ge Zhou, Ge Zhou, Feng Hua, Feng Hua, } "Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels", Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); doi: 10.1117/12.348324; https://doi.org/10.1117/12.348324
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