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30 April 1999 Nonlinear optic polymer core conductive-polymer-clad optoelectronic device
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A scheme for a five volt V(pi) ) nonlinear optical (NLO) polymer optoelectronic (OE) device is presented with the potential to realize an interaction length that is about an order of magnitude shorter than conventional five volt V(pi) ) NLO polymer OE devices. It utilizes available NLO polymer materials for the core layer and a conductive polymer material for the cladding layers. Since the cladding layer material is more conductive than the core material, most of the applied poling and modulation voltages is dropped across the core layer, rendering a more efficient device. Using an NLO polymer material with electrooptic (EO) coefficients of say 22 pm/V, it is feasible to demonstrate < 2 mm OE devices operating at TTL voltage levels. These small device sizes could lead to use within electronic multichip modules. In addition, since the majority of the poling voltage is dropped across the core layer, less voltage is required so that in-situ poling becomes possible.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James G. Grote and James P. Drummond "Nonlinear optic polymer core conductive-polymer-clad optoelectronic device", Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999);

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