13 April 1999 2D VCSEL arrays for chip-level optical interconnects
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Abstract
Oxide-confined vertical cavity surface-emitting laser diodes (VCSELs) are fabricated for applications in chip-level optical interconnects. 980 nm wavelength devices in arrays with 4 by 8 elements are investigated. Threshold voltages of 1.5 V and operation voltages below 2V of submilliamp threshold current lasers are fully comparable to 3.3 V CMOS technology. Modulation bandwidths of 9.5 GHz at 1.8 mA laser current with a modulation current efficiency factor of 10 GHz/(root)mA is demonstrated for 3 micrometers diameter VCSELs. No error floors are observed down to bit error rates of 10-11 at 12.5 Gb/s data transmission. VCSEL based top illuminated resonant cavity enhanced photodetectors show peak efficiencies of 50 percent combined with full spectral half-widths of 5 nm.
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Roger King, Roger King, Rainer Michalzik, Rainer Michalzik, Dieter Wiedenmann, Dieter Wiedenmann, Roland Jaeger, Roland Jaeger, Peter Schnitzer, Peter Schnitzer, T. Knoedl, T. Knoedl, Karl Joachim Ebeling, Karl Joachim Ebeling, } "2D VCSEL arrays for chip-level optical interconnects", Proc. SPIE 3632, Optoelectronic Interconnects VI, (13 April 1999); doi: 10.1117/12.344625; https://doi.org/10.1117/12.344625
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