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13 April 1999 2D VCSEL arrays for chip-level optical interconnects
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Oxide-confined vertical cavity surface-emitting laser diodes (VCSELs) are fabricated for applications in chip-level optical interconnects. 980 nm wavelength devices in arrays with 4 by 8 elements are investigated. Threshold voltages of 1.5 V and operation voltages below 2V of submilliamp threshold current lasers are fully comparable to 3.3 V CMOS technology. Modulation bandwidths of 9.5 GHz at 1.8 mA laser current with a modulation current efficiency factor of 10 GHz/(root)mA is demonstrated for 3 micrometers diameter VCSELs. No error floors are observed down to bit error rates of 10-11 at 12.5 Gb/s data transmission. VCSEL based top illuminated resonant cavity enhanced photodetectors show peak efficiencies of 50 percent combined with full spectral half-widths of 5 nm.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roger King, Rainer Michalzik, Dieter Wiedenmann, Roland Jaeger, Peter Schnitzer, T. Knoedl, and Karl Joachim Ebeling "2D VCSEL arrays for chip-level optical interconnects", Proc. SPIE 3632, Optoelectronic Interconnects VI, (13 April 1999);


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