High-throughput optoelectronic interconnect for holographic memory devices

Bipin Bihari; Jinghuai Fa; Xuegong Deng; Brian M. Davies; Suning Tang; Ray T. Chen

doi:10.1117/12.344618

13 April 1999 High-throughput optoelectronic interconnect for holographic memory devices

Bipin Bihari, Jinghuai Fa, Xuegong Deng, Brian M. Davies, Suning Tang, Ray T. Chen

Proceedings Volume 3632, Optoelectronic Interconnects VI; (1999) https://doi.org/10.1117/12.344618
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Novel optical memory systems offer ultra large storage capacity and with fast access time. The current commercial system can produce in access of 300 Mb/s aggregate data rate and near future system will yield aggregate data rates on the order of 1-10 Gb/s. However, full exploitation of this feature is possible only if memory to processor interface is fast enough to handle such a data rate. In this presentation, a unique optoelectronic interconnect architecture based on WDM and WDDM are described.

Citation Download Citation

Bipin Bihari, Jinghuai Fa, Xuegong Deng, Brian M. Davies, Suning Tang, and Ray T. Chen "High-throughput optoelectronic interconnect for holographic memory devices", Proc. SPIE 3632, Optoelectronic Interconnects VI, (13 April 1999); https://doi.org/10.1117/12.344618

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