New cryogenic P-channel metal-oxide-semiconductor field effect transistor (MOSFET) with optimized doping yielding performance superior to the G-118, W-164, and 3N165 at 77K, 4K, and 1.8K

R. F. Arentz; V. Hadek; V. L. Hoxie

doi:10.1117/12.934190

16 August 1983 New cryogenic P-channel metal-oxide-semiconductor field effect transistor (MOSFET) with optimized doping yielding performance superior to the G-118, W-164, and 3N165 at 77K, 4K, and 1.8K

R. F. Arentz, V. Hadek, V. L. Hoxie

Author Affiliations +

Proceedings Volume 0364, Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II; (1983) https://doi.org/10.1117/12.934190
Event: 26th Annual Technical Symposium, 1982, San Diego, United States

Abstract

We introduce a new P-channel, enhancement mode, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) which is optimized for use at liquid helium temperatures. The new device, now labelled the ZK-111, operates very well to at least 1.8K. It can operate at power levels of a few picowatts, is zener diode protected, and has higher gain and transconductance, lower channel "ON" resistance, higher channel "OFF" resistance, and better thermal cycling stability than any MOSFET commonly used in infrared focal planes. It has a grounded gate 1/f spot noise that is less than 1μV/√Hz at 1 Hz, ,and is 1/f to beyond 50 KHz. It is now commercially available through Cryoelectronic Inc.

Citation Download Citation

R. F. Arentz, V. Hadek, and V. L. Hoxie "New cryogenic P-channel metal-oxide-semiconductor field effect transistor (MOSFET) with optimized doping yielding performance superior to the G-118, W-164, and 3N165 at 77K, 4K, and 1.8K", Proc. SPIE 0364, Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II, (16 August 1983); https://doi.org/10.1117/12.934190

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