27 April 1999 Design, fabrication, and characterization of a family of active pixel CID imagers
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Abstract
A new type of sensor has been developed for applications in high radiation environments such as space. In this paper we present the pixel structure, fabrication cycle and measured performance of a family of active pixel charge injection devices designed in PMOS and respectively CMOS technology. A simple 8 by 8 prototype was developed in 1996. This was followed by a 40 by 54 array having 90 micrometers pixel size. This device has address decoders integrated on chip and, a transfer gate included in each pixel in order to eliminate feed-through noise. These circuits were fabricated at RIT using a 6 micrometers PMOS double polysilicon technology. A third 128 by 128 array having 41 micrometers pixel size has been designed and manufactured at a commercial foundry using 2 micrometers CMOS technology. The on-chip decoders allow resetting of selective regions of the chip.
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George Lungu, Gerrit Lubberts, Zoran Ninkov, Dan Ma, Lynn F. Fuller, Joseph Carbone, Zulfiquar Alam, Claudia Borman, "Design, fabrication, and characterization of a family of active pixel CID imagers", Proc. SPIE 3649, Sensors, Cameras, and Systems for Scientific/Industrial Applications, (27 April 1999); doi: 10.1117/12.347086; https://doi.org/10.1117/12.347086
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Sensors

Transistors

Charge-coupled devices

Imaging systems

Electrodes

Molybdenum

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