23 April 1999 Determination of residual stress and elastic constants of silicon open stencil masks for ion projection lithography
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Proceedings Volume 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98; (1999); doi: 10.1117/12.346213
Event: 15th European Conference on Mask Technology for Integrated Circuits and Micro-Components, 1998, Munich, Germany
Abstract
The Ion Projection Lithography is one challenge for a semiconductor technology, starting with sub micron structures, which are beyond the facilities of conventional UV lithography. Within this field of research one of the most critical aspects is the development of stencil mask, because the stress formation during the various process steps affects the critical dimensions of the structures to be written. In this paper different methods for the determination of residual stress and elastic constants of thin membranes of doped silicon are reviewed and additionally, a novel technique is presented. First experimental result show, that they are quite different from the values of the bulk material.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Artur Degen, Feng Shi, Eva Sossna, R. Sunyk, Joachim Voigt, Burkhard E. Volland, B. Reinker, Ivo W. Rangelow, "Determination of residual stress and elastic constants of silicon open stencil masks for ion projection lithography", Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346213; https://doi.org/10.1117/12.346213
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KEYWORDS
Silicon

Photomasks

Semiconducting wafers

Etching

Diffraction

Ions

Projection lithography

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