23 April 1999 Development of an inductively coupled plasma etching system for 230-mm reticles
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Proceedings Volume 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98; (1999) https://doi.org/10.1117/12.346220
Event: 15th European Conference on Mask Technology for Integrated Circuits and Micro-Components, 1998, Munich, Germany
Abstract
The improved economics of larger chip/die sizes combined with the transition to 300 nm wafers will drive the photomask industry into the use of 230 mm reticles. This conversion is also anticipated to occur simultaneously with the introduction of automated mask handling and at the 0.15 micrometers to 0.13 micrometers technology generations requiring improved CD uniformities and smaller defect sizes. This paper will describe the development of a large area inductively coupled plasma source capable of processing 230 mm reticles. The use of Langmuir probe measurements performed on a fully adjustable prototype source with the intent to arrive at an optimum design for generation of a high density and uniform plasma will be discussed. An overview of an automated front end capable of handling both 6 inch and 230 mm reticles will be reviewed. The high plasma density along with independent ion energy control and low- pressure operation make inductively coupled plasma technology well suited to met the requirements of future wafer level generations. The use of a custom configurable cluster tool with an automated front end enables this system to adapt to the individual requirements of each photomask manufacturability facility.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David A. Klein, David A. Klein, John Donohue, John Donohue, } "Development of an inductively coupled plasma etching system for 230-mm reticles", Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346220; https://doi.org/10.1117/12.346220
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