23 April 1999 Inspecting the new generation of reticles using UV imaging
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Proceedings Volume 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98; (1999) https://doi.org/10.1117/12.346228
Event: 15th European Conference on Mask Technology for Integrated Circuits and Micro-Components, 1998, Munich, Germany
Abstract
The manufacturing of advanced reticles for deep UV steppers has stressed the mask industry's writing, processing, inspection and repair capabilities. Meeting technology demands has been especially arduous for reticle defect inspection with the rapid evolution of both novel PSM materials and OPC geometries. Also, the switch to a 4x- reduction ratio and every-lower k1 wafer lithography has resulted in increased overall defect printability. To respond to these challenges, a new reticle inspection system with laser UV imaging has been evaluated and shown to achieve mask defect sensitivity of 150 nm and below on DUV EA-PSM and OPC masks.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark Andrew Merrill, James N. Wiley, Benjamin George Eynon, "Inspecting the new generation of reticles using UV imaging", Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346228; https://doi.org/10.1117/12.346228
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