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28 April 1999 Schroedinger's wave function and related device characteristics in MODFET under illumination
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Proceedings Volume 3666, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98; (1999) https://doi.org/10.1117/12.347929
Event: International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98, 1998, New Delhi, India
Abstract
The effect of illumination on the Schrodinger's wave function and related device characteristics has been studied in the quantum well of a n-AlGaAs/GaAs MODFET. Partial depletion of the active region of the MODFET has been considered. At the heterojunction interface, the quantum well has been considered as a modified triangular potential well of finite depth. The potential energy and the subband energy are calculated by solving the Poisson's equation. The wave function, sheet concentration and the I-V characteristics of the MODFET under dark and illuminated conditions have been calculated and discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. K. Singh and B. B. Pal "Schroedinger's wave function and related device characteristics in MODFET under illumination", Proc. SPIE 3666, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98, (28 April 1999); https://doi.org/10.1117/12.347929
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