28 April 1999 Transient pulse propagation effects in unmagnetized and magnetoactive narrow direct-gap semiconductors
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Proceedings Volume 3666, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98; (1999) https://doi.org/10.1117/12.347988
Event: International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98, 1998, New Delhi, India
Abstract
Based upon coherent radiation-semiconductor interaction, pulse propagation effects such as pulse break-up and pulse peak shifts in unmagnetized bulk narrow direct-gap semiconductors as well as pulse chirping and broadening in the above crystals in presence of a moderate magnetostatic field have been analyzed. The effect of externally applied magnetic field on the transient optical processes has been treated in terms of the Landau level splittings. Numerical analysis of nonlinear phase shift, pulse break-up, pulse chirping and broadening have been made in InSb duly irradiated by infrared pulsed lead-Salt (PbEuSeTe) or AgGaS2 dye laser with photon energy in the vicinity of the crystal band gap. The results being in good qualitative agreement with the available experimental observations suggest the suitability of the narrow-gap semiconductors in all-optical processing devices.
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Pranay K. Sen, Pratima Sen, "Transient pulse propagation effects in unmagnetized and magnetoactive narrow direct-gap semiconductors", Proc. SPIE 3666, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98, (28 April 1999); doi: 10.1117/12.347988; https://doi.org/10.1117/12.347988
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