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12 July 1999 New multicomponent oxide materials for thin film gas sensors
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Cl2 and O3 gas detection at high sensitivity has been realized by newly developed thin-film gas sensors incorporating multicomponent oxides such as ZnO-In2O3, MgO-In2O3, and Zn2In2-MgIn2O4 systems. The sensors exhibited an increase in resistance with exposure to Cl2 or O3 gas. The sensing properties of the multicomponent oxide thin-film sensors were strongly dependent on the composition of the multicomponent oxide films used as well as the operating temperature. The highest sensitivity for Cl2 and O3 gases was obtained in sensors using a Zn2In2O5- MgIn2O4 thin film prepared with Zn2In2O5 contents of about 60 and 20 mol. percent respectively: Cl2 gas detected at a minimum concentration of 0.01 and O3 gas at 0.4ppm. A fast response as well as a high sensitivity were obtained in these sensors operated with alternating exposures in air and Cl2 or O3 gas. The resistivity, carrier concentration and Hall mobility of the thin-film sensors were measured under operation conditions using the van der Pauw method. It should be noted that a decrease or increase of resistivity in the thin-film sensors resulted from a simultaneously increase or decrease of both carrier concentration and Hall mobility. The increase in resistivity is attributed to the trapping of free electrons resulting from Cl2 and O3 being adsorbed on grain boundaries and/or the film surface, the same as that produced by adsorption of oxygen. A Zn2In2O5- MgIn2O4 thin-film gas sensor exhibited very stable long term operation in an atmosphere with a high concentration of Cl2 gas.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshihiro Miyata and Tadatsugu Minami "New multicomponent oxide materials for thin film gas sensors", Proc. SPIE 3675, Smart Structures and Materials 1999: Smart Materials Technologies, (12 July 1999);

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