12 July 1999 Sputter deposition of NiTi thin film exhibiting the SME at room temperatures
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Abstract
In this paper we will present a novel method for depositing NiTi thin film by DC sputtering that produces films with transformation temperatures very close to that of the target. The new process involves heating the target to temperatures over 400 degrees C and does not require compositional modification of the 50/50atm percent NiTi target. Results from tensile testing, XRD, TEM, and DSC are presented. Conclusions are cold target produces films that were in the Austenite phase at rom temperature while hot target produces films that were Martensite at room temperatures, confirming that compositional modification can be produced by varying the target temperature. Films that were produced by gradual heating of the target, produced a gradation of composition through the film thickness. These gradation films exhibiting the two-way SME. The simplicity of this new process should increase the use of NiTi film sin microactuator devices.
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Ken K. Ho, Gregory Paul Carman, and Peter Jardine "Sputter deposition of NiTi thin film exhibiting the SME at room temperatures", Proc. SPIE 3675, Smart Structures and Materials 1999: Smart Materials Technologies, (12 July 1999); doi: 10.1117/12.352803; https://doi.org/10.1117/12.352803
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