Actinic EUVL mask blank defect inspection system

Seongtae Jeong; Lewis E. Johnson; Yun Lin; Senajith Rekawa; Pei-yang Yan; Patrick A. Kearney; Edita Tejnil; James H. Underwood; Jeffrey Bokor

doi:10.1117/12.351101

25 June 1999 Actinic EUVL mask blank defect inspection system

Seongtae Jeong, Lewis E. Johnson, Yun Lin, Senajith Rekawa, Pei-yang Yan, Patrick A. Kearney, Edita Tejnil, James H. Underwood, Jeffrey Bokor

Author Affiliations +

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351101
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Recent experimental results from an actinic EUVL mask blank defect inspection system are presented. Bright-field and dark-field scans from various programmed defect samples are reported. Our results show that the current system can detect defects as small as 0.2 micrometers . Substrate roughness is identified as the limitation to the detection sensitivity. A preliminary defect counting experiment is reported and future improvements for practical defect counting are discussed.

Citation Download Citation

Seongtae Jeong, Lewis E. Johnson, Yun Lin, Senajith Rekawa, Pei-yang Yan, Patrick A. Kearney, Edita Tejnil, James H. Underwood, and Jeffrey Bokor "Actinic EUVL mask blank defect inspection system", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351101

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