25 June 1999 Actinic EUVL mask blank defect inspection system
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Abstract
Recent experimental results from an actinic EUVL mask blank defect inspection system are presented. Bright-field and dark-field scans from various programmed defect samples are reported. Our results show that the current system can detect defects as small as 0.2 micrometers . Substrate roughness is identified as the limitation to the detection sensitivity. A preliminary defect counting experiment is reported and future improvements for practical defect counting are discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seongtae Jeong, Seongtae Jeong, Lewis E. Johnson, Lewis E. Johnson, Yun Lin, Yun Lin, Senajith Rekawa, Senajith Rekawa, Pei-yang Yan, Pei-yang Yan, Patrick A. Kearney, Patrick A. Kearney, Edita Tejnil, Edita Tejnil, James H. Underwood, James H. Underwood, Jeffrey Bokor, Jeffrey Bokor, } "Actinic EUVL mask blank defect inspection system", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351101; https://doi.org/10.1117/12.351101
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