25 June 1999 Advanced negative i-line resist development on metal surfaces for next-generation lithography mask fabrication
Author Affiliations +
Development of next generation mask technology requires the use of several different metallic materials. As a result, it is necessary to develop resist processes which offer a combination of good resolution and adhesion for each surface. In this study, Ultra i-300, a high resolution, chemically amplified, negative i-line resist was evaluated for use with several metal substrate materials. The metal films in the evaluation include: Cr, TaSi, TaSiN, and TiW. Early tests with Ultra i-300 using a baseline process optimized for silicon, provide very poor adhesion on these metal films. Several approaches were used to solve this problem including pre-application dehydration bakes, modified processing bakes, surface pretreatments, and use of anti-reflective coatings. Adjustment of the soft bake/post bake temperatures greatly improved adhesion, but resulted in severe standing waves and/or poor processing latitude. Significant improvements were achieved using AR2-600 a DUV anti-reflective coating (ARC) with a modified bake process. This eliminated standing waves, improved adhesion, and provided the best resolution and processing latitude. Other ARCs were also evaluated in an attempt to further optimize the process. Although the goal of this study was to develop a resist process for next generation mask technology, the results are applicable wherever it is desirable to use a negative i-line resists on metallic substrates.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Craig L. Ghelli, Craig L. Ghelli, David P. Mancini, David P. Mancini, Douglas J. Resnick, Douglas J. Resnick, Pawitter J. S. Mangat, Pawitter J. S. Mangat, William J. Dauksher, William J. Dauksher, "Advanced negative i-line resist development on metal surfaces for next-generation lithography mask fabrication", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351117; https://doi.org/10.1117/12.351117


Vote taking for EUV lithography a radical approach to...
Proceedings of SPIE (March 23 2017)
1x stencil masks fabrication and their use in Low Energy...
Proceedings of SPIE (December 05 2004)
Fabrication of membrane mask for next-generation lithography
Proceedings of SPIE (December 29 1999)
CD-measurement technique for hole patterns on stencil mask
Proceedings of SPIE (December 05 2004)
SiO2 buffer etch processes with a TaN absorber for EUV...
Proceedings of SPIE (December 05 2004)
Modeling LEEPL mask fabrication processes
Proceedings of SPIE (May 19 2004)

Back to Top