Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

Reginald C. Farrow; Warren K. Waskiewicz; Isik C. Kizilyalli; Gregg M. Gallatin; James Alexander Liddle; Masis M. Mkrtchyan; Avi Kornblit; Leonidas E. Ocola; Fred P. Klemens; Joseph A. Felker; Christopher J. Biddick; Joseph S. Kraus; Myrtle I. Blakey; Paul A. Orphanos; Nace Layadi; Sailesh M. Merchant

doi:10.1117/12.351093

25 June 1999 Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

Reginald C. Farrow, Warren K. Waskiewicz, Isik C. Kizilyalli, Gregg M. Gallatin, James Alexander Liddle, Masis M. Mkrtchyan, Avi Kornblit, Leonidas E. Ocola, Fred P. Klemens, Joseph A. Felker, Christopher J. Biddick, Joseph S. Kraus, Myrtle I. Blakey, Paul A. Orphanos, Nace Layadi, Sailesh M. Merchant

Author Affiliations +

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351093
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

A manufacturable process for fabricating alignment marks that are compatible the SCALPEL lithography system is described. The marks were fabricated in a SiO₂/WSi₂ structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron (BSE) signal. Scans of 1 micrometers line-space patterns yielded mark positions that were repeatable within 20 nm 3(sigma) with a dose of 4 (mu) C/cm² and signal-to-noise of 32 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response combined with SPOL machine factors. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 micrometers while maintaining 35 nm 3(sigma) precision. Further improvements in mark detection repeatability are expected when the SCALPEL electron optics is fully optimized.

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Reginald C. Farrow, Warren K. Waskiewicz, Isik C. Kizilyalli, Gregg M. Gallatin, James Alexander Liddle, Masis M. Mkrtchyan, Avi Kornblit, Leonidas E. Ocola, Fred P. Klemens, Joseph A. Felker, Christopher J. Biddick, Joseph S. Kraus, Myrtle I. Blakey, Paul A. Orphanos, Nace Layadi, and Sailesh M. Merchant "Alignment mark detection in CMOS materials with SCALPEL e-beam lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351093

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