25 June 1999 Alignment mark detection in CMOS materials with SCALPEL e-beam lithography
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Abstract
A manufacturable process for fabricating alignment marks that are compatible the SCALPEL lithography system is described. The marks were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the image of the corresponding mask mark over the wafer mark and detecting the backscattered electron (BSE) signal. Scans of 1 micrometers line-space patterns yielded mark positions that were repeatable within 20 nm 3(sigma) with a dose of 4 (mu) C/cm2 and signal-to-noise of 32 dB. An analysis shows that the measured repeatability is consistent with a random noise limited response combined with SPOL machine factors. By using a digitally sequenced mark pattern, the capture range of the mark detection was increased to 13 micrometers while maintaining 35 nm 3(sigma) precision. Further improvements in mark detection repeatability are expected when the SCALPEL electron optics is fully optimized.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Reginald C. Farrow, Reginald C. Farrow, Warren K. Waskiewicz, Warren K. Waskiewicz, Isik C. Kizilyalli, Isik C. Kizilyalli, Gregg M. Gallatin, Gregg M. Gallatin, James Alexander Liddle, James Alexander Liddle, Masis M. Mkrtchyan, Masis M. Mkrtchyan, Avi Kornblit, Avi Kornblit, Leonidas E. Ocola, Leonidas E. Ocola, Fred P. Klemens, Fred P. Klemens, Joseph A. Felker, Joseph A. Felker, Christopher J. Biddick, Christopher J. Biddick, Joseph S. Kraus, Joseph S. Kraus, Myrtle I. Blakey, Myrtle I. Blakey, Paul A. Orphanos, Paul A. Orphanos, Nace Layadi, Nace Layadi, Sailesh M. Merchant, Sailesh M. Merchant, } "Alignment mark detection in CMOS materials with SCALPEL e-beam lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351093; https://doi.org/10.1117/12.351093
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