25 June 1999 Application of two-wavelength optical heterodyne alignment system in XS-1
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This article presents the alignment performance of the two- wavelength optical heterodyne alignment system in the x-ray stepper XS-1. The alignment accuracy obtained by the double- exposure method with a single mask and a Si trench wafer was better than 20 nm. The dependence of the alignment accuracy on Si trench depth indicated that the two wavelengths compliment each other and ensure a 3(sigma) of less than 20 nm. The alignment capabilities for other processed test wafers were also investigated by mix-and-match exposure. For etched SiO2 and poly-Si film on a Si trench, an accuracy below 20 nm was obtained. For AlSiCu film sputtered on etched SiO2, there appeared systematic alignment offsets depended on die position, which are thought to be due to a wafer-induced shift. The systematic offset errors were eliminated by the use of send-ahead wafer and corrections for individual offsets on each die, and thus the alignment accuracy was improved to 20-40 nm for each alignment axis. The two-wavelength heterodyne alignment system of the XS-1 has sufficient potential for 130-nm lithography and below.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Soichiro Mitsui, Soichiro Mitsui, Takao Taguchi, Takao Taguchi, Yukiko Kikuchi, Yukiko Kikuchi, Hajime Aoyama, Hajime Aoyama, Yasuji Matsui, Yasuji Matsui, Masanori Suzuki, Masanori Suzuki, Tsuneyuki Haga, Tsuneyuki Haga, Makoto Fukuda, Makoto Fukuda, Hirofumi Morita, Hirofumi Morita, Akinori Shibayama, Akinori Shibayama, } "Application of two-wavelength optical heterodyne alignment system in XS-1", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351120; https://doi.org/10.1117/12.351120


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