Calculating aerial images from EUV masks

Thomas V. Pistor; Andrew R. Neureuther

doi:10.1117/12.351153

25 June 1999 Calculating aerial images from EUV masks

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351153
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Aerial images for line/space patterns, arrays of posts and an arbitrary layout pattern are calculated for EUV masks in a 4X EUV imaging system. Both mask parameters and illumination parameters are varied to investigate their effects on the aerial image. To facilitate this study, a parallel version of TEMPEST with a Fourier transform boundary condition was developed and run on a network of 24 microprocessors. Line width variations are observed when absorber thickness or sidewall angle changes. As the line/space pattern scales to smaller dimensions, the aspect ratios of the absorber features increase, introducing geometric shadowing and reducing aerial image intensity and contrast. 100nm square posts have circular images of diameter close to 100nm, but decreasing in diameter significantly when the corner round radius at the mask becomes greater than 50 nm. Exterior mask posts image slightly smaller and with higher ellipticity than interior mask posts. The aerial image of the arbitrary test pattern gives insight into the effects of the off-axis incidence employed in EUV lithography systems.

Citation Download Citation

Thomas V. Pistor and Andrew R. Neureuther "Calculating aerial images from EUV masks", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351153

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