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25 June 1999 EUV (13.5-nm) light generation using a dense plasma focus device
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A dense plasma focus (DPF) device has been investigated as a source for EUV lithography. Initial characterizations have been made of a prototype DPF employing an all-solid-state pulse power drive. Using the results from a vacuum grating spectrometer combined with measurements with a silicon photo diode, it has been found that substantial amounts of radiation within the reflectance band of Mo/Si mirrors can be generated using the 13.5 nm emission line of doubly ionized Lithium. This prototype DPF converts 25J of stored electrical energy per pulse into approximately 0.76J of in- band 13.5nm radiation emitted into 4(pi) steradians. The pulse repetition rate performance of this device has been investigated up to its DC power supply limit of 200Hz. No significant reduction in EUV output was found up to this repetition rate. At 200Hz, the measured pulse-to-pulse energy stability was (sigma) equals 6 percent and no drop out pulses were observed. The electrical circuit and operation of this prototype DPF device is presented along with a description of several future modifications intended to improve stability and efficiency.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William N. Partlo, Igor V. Fomenkov, and Daniel L. Birx "EUV (13.5-nm) light generation using a dense plasma focus device", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999);


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