25 June 1999 EUV mask patterning approaches
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Abstract
In the last two years, we have developed tow Extreme UV (EUV) mask fabrication process flows, namely the substractive metal and the damascene process flows, utilizing silicon wafer process tools. Both types of EUV mask have been tested in a 10X reduction EUV exposure system. Dense lines less than 100 nm in width have been printed using both 0.6 micrometers thick top surface imaging resists and ultra-thin DUV resist. The EUV masks used in EUV lithography development work have been routinely made by using the current wafer process tools. The two EUV mask processes that we have developed both have some advantages and disadvantages. The simpler subtractive metal process is compatible with the current reticle defect repair methodologies. On the other hand, the more complex damascene process facilitates mask cleaning and particle inspection.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei-yang Yan, Pei-yang Yan, Guojing Zhang, Guojing Zhang, Patrick Kofron, Patrick Kofron, Jenn Chow, Jenn Chow, Alan R. Stivers, Alan R. Stivers, Edita Tejnil, Edita Tejnil, Gregory Frank Cardinale, Gregory Frank Cardinale, Patrick A. Kearney, Patrick A. Kearney, "EUV mask patterning approaches", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351102; https://doi.org/10.1117/12.351102
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